The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Sep. 17, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Hsien Hsu, Hsin-Chu, TW;
Hong-Hsing Chou, Jhubei, TW;
Hu-Wei Lin, Hsinchu, TW;
Chi-Jen Hsieh, Toufen Township, TW;
Jr-Wei Ye, Erlin Township, TW;
Yuan-Ting Huang, Hsinchu, TW;
Ching-Hsing Chiang, Hsin-Chu, TW;
Hua-Kuang Teng, Qionglin Township, TW;
Yen-Chen Lin, Hsinchu, TW;
Carolina Poe, Jhubei, TW;
Tsung-Cheng Huang, Jhubei, TW;
Chia-Hung Chu, Pingzhen, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes rotating a wafer at a first speed for a first time duration. The wafer is rotated at a second speed that is lower than the first speed for a second time duration after the first time duration. The wafer is rotated at a third speed that is higher than the second speed for a third time duration after the second time duration. A photoresist is dispensed on the wafer during the first time duration and at least a portion of a time interval that includes the second time duration and the third time duration.