The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Nov. 19, 2013
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Brandon P. Wirz, Kuna, ID (US);

Jaspreet S. Gandhi, Boise, ID (US);

Christopher J. Gambee, Caldwell, ID (US);

Satish Yeldandi, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/3205 (2006.01); H01L 21/60 (2006.01); H01L 23/48 (2006.01); H01L 21/44 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/94 (2013.01); H01L 2224/038 (2013.01); H01L 2224/039 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0382 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05016 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05584 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/365 (2013.01);
Abstract

The present technology is directed to manufacturing semiconductor dies with under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects or other types of interconnects. In one embodiment, a method for forming under-bump metal (UBM) structures on a semiconductor die comprises constructing a UBM pillar by plating a first material onto first areas of a seed structure and depositing a second material over the first material. The first material has first electrical potential and the second material has a second electrical potential greater than the first electrical potential. The method further comprises reducing the difference in the electrical potential between the first material and the second material, and then removing second areas of the seed structure between the UBM pillars thereby forming UBM structures on the semiconductor die.


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