The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Dec. 28, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Donald F. Canaperi, Bridgewater, CT (US);

Daniel C. Edelstein, White Plains, NY (US);

Alfred Grill, White Plains, NY (US);

Son V. Nguyen, Schenectady, NY (US);

Takeshi Nogami, Albany, NY (US);

Deepika Priyadarshini, Guilderland, NY (US);

Hosadurga Shobha, Niskayuna, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 29/872 (2006.01); H01L 29/739 (2006.01); H01L 21/285 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 21/76879 (2013.01); H01L 23/528 (2013.01); H01L 29/7395 (2013.01); H01L 29/872 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An electrical device including an opening in a low-k dielectric material, and a copper including structure present within the opening for transmitting electrical current. A liner is present between the opening and the copper including structure. The liner includes a superlattice structure comprised of a metal oxide layer, a metal layer present on the metal oxide layer, and a metal nitride layer that is present on the metal layer. A first layer of the superlattice structure that is in direct contact with the low-k dielectric material is one of said metal oxide layer and a final layer of the superlattice structure that is in direct contact with the copper including structure is one of the metal nitride layers.


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