The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Mar. 05, 2014
Applicant:

Tokyo Electron Limited, Minato-ku, Tokyo, JP;

Inventors:

Nobuhiro Takahashi, Nirasaki, JP;

Tetsuro Takahashi, Nirasaki, JP;

Shuji Moriya, Nirasaki, JP;

Masashi Matsumoto, Nirasaki, JP;

Junichiro Matsunaga, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01);
Abstract

An etching method includes loading a target substrate W into a chamber, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an Ogas into the chamber, while at least the Ogas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the Ogas.


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