The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
May. 20, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yen-Cheng Lu, New Taipei, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Shun-Der Wu, Tainan, TW;
Anthony Yen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01);
Abstract
The present disclosure provides an extreme ultraviolet (EUV) lithography process. The process includes loading a wafer to an EUV lithography system having an EUV source; determining a dose margin according to an exposure dosage and a plasma condition of the EUV source; and performing a lithography exposing process to the wafer by EUV light from the EUV source, using the exposure dosage and the dose margin.