The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Aug. 19, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chen-Hua Yu, Hsin-Chu, TW;

Ming-Fa Chen, Taichung, TW;

Wen-Sen Lu, Hsin-Chu, TW;

Wen-Chih Chiou, Zhunan Township, TW;

Wen-Ching Tsai, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 21/768 (2006.01); H01L 21/56 (2006.01); H01L 23/36 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/522 (2013.01); H01L 21/565 (2013.01); H01L 21/76897 (2013.01); H01L 21/76898 (2013.01); H01L 23/3157 (2013.01); H01L 23/36 (2013.01); H01L 23/481 (2013.01); H01L 23/5384 (2013.01); H01L 24/09 (2013.01); H01L 24/89 (2013.01); H01L 25/00 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 23/3114 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/11 (2013.01); H01L 2224/18 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/37 (2013.01);
Abstract

Disclosed herein is a package comprising a first die having a first redistribution layer (RDL) disposed on a first side of a first substrate and a second die having a second RDL disposed on a first side of a second substrate, with the first RDL bonded to the second RDL. A third die having a third RDL is disposed on a first side of a third substrate, the third die mounted over the second die, with the second die disposed between the first die and the third die. First vias extend through, and are electrically isolated from, the second substrate, with the first vias each contacting a conductive element in the first RDL or the second RDL. Second vias extend through, and are electrically isolated from, the third substrate, with the second vias each contacting a conductive element in the third RDL or one of the first vias.


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