The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Oct. 27, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Ryan O. Jung, Rensselaer, NY (US);

Fee Li Lie, Albany, NY (US);

Jeffrey C. Shearer, Albany, NY (US);

John R. Sporre, Albany, NY (US);

Sean Teehan, Rensselaer, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28132 (2013.01); H01L 21/32139 (2013.01); H01L 27/0886 (2013.01); H01L 29/04 (2013.01); H01L 29/16 (2013.01); H01L 29/42356 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Sacrificial gate structures having an aspect ratio of greater than 5:1 are formed on a substrate. In some embodiments, each sacrificial gate structure straddles a portion of a semiconductor fin that is present on the substrate. An anchoring element is formed orthogonal to each sacrificial gate structure rendering the sacrificial gate structures mechanically stable. After formation of a planarization dielectric layer, each anchoring element can be removed and thereafter each sacrificial gate structure can be replaced with a functional gate structure.


Find Patent Forward Citations

Loading…