The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Apr. 26, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Li-Wei Feng, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Yi-Fan Li, Tainan, TW;
Kun-Hsin Chen, Pingtung County, TW;
Tong-Jyun Huang, Tainan, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
Nan-Yuan Huang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/66636 (2013.01); H01L 29/66803 (2013.01); H01L 29/7851 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a recess in the substrate; forming a buffer layer in the recess; forming an epitaxial layer on the buffer layer; and removing part of the epitaxial layer, part of the buffer layer, and part of the substrate to form fin-shaped structures.