The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Dec. 13, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Li-Wei Feng, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Shih-Fang Hong, Tainan, TW;
Chao-Hung Lin, Changhua County, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for manufacturing a nanowire transistor device includes the following steps: A substrate is provided, and the substrate includes a plurality of nanowires suspended thereon. Each of the nanowires includes a first semiconductor core. Next, a first selective epitaxial growth process is performed to form second semiconductor cores respectively surrounding the first semiconductor cores. The second semiconductor cores are spaced apart from the substrate. After forming the second semiconductor core, a gate is formed on the substrate.