The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jul. 22, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Che-Cheng Chang, New Taipei, TW;
Tung-Wen Cheng, New Taipei, TW;
Jui Fu Hseih, Hsinchu County, TW;
Mu-Tsang Lin, Changhua County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76235 (2013.01); H01L 21/76232 (2013.01); H01L 29/0649 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor structure includes a semiconductor substrate and a shallow trench isolation (STI). The STI includes a sidewall interfacing with the semiconductor substrate. The STI extrudes from a bottom portion of the semiconductor substrate, and the STI includes a bottom surface contacting the bottom portion of the semiconductor substrate; a top surface opposite to the bottom surface. The bottom surface includes a width greater than a width of the top surface.