The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Jun. 19, 2015
Applied Materials, Inc., Santa Clara, CA (US);
Weimin Zeng, San Jose, CA (US);
Thanh X. Nguyen, San Jose, CA (US);
Yana Cheng, San Jose, CA (US);
Yong Cao, San Jose, CA (US);
Daniel Lee Diehl, Chiba, JP;
Srinivas Guggilla, San Jose, CA (US);
Rongjun Wang, Dublin, CA (US);
Xianmin Tang, San Jose, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.