The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Jul. 20, 2016
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Senichi Ryo, Tokyo, JP;

Hirokazu Matsumoto, Tokyo, JP;

Toshiyuki Yoshikawa, Tokyo, JP;

Yukinobu Ohura, Tokyo, JP;

Assignee:

Disco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02076 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 23/544 (2013.01); H01L 21/02041 (2013.01); H01L 21/02098 (2013.01); H01L 2221/68327 (2013.01); H01L 2223/5446 (2013.01);
Abstract

A wafer processing method includes a wafer holding step of holding a wafer having devices formed on the front side, a protective film forming step of forming a water-soluble protective film on the front side of the wafer, a laser beam applying step of applying a laser beam to the wafer along streets, a cleaning step of cleaning the wafer to then remove the protective film, and a foreign matter removing step of removing foreign matter from the wafer when a predetermined period of time has elapsed after cleaning. This period of time is set as a period of time until a phosphorus containing reaction product produced at a laser processed portion is evaporated to react with water in the air, thereby producing the foreign matter containing phosphorus on bumps formed on each device.


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