The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Feb. 02, 2016
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Nobuhiro Takahashi, Nirasaki, JP;
Masashi Matsumoto, Beaverton, OR (US);
Ayano Hagiwara, Nirasaki, JP;
Koji Takeya, Nirasaki, JP;
Junichiro Matsunaga, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32135 (2013.01); H01L 21/3065 (2013.01); H01L 21/67017 (2013.01); H01L 21/67069 (2013.01);
Abstract
An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of Fgas and NHgas in an etching gas that has a gas system including the Fgas and the NHgas.