The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Mar. 12, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chi-Ching Lo, Hsinchu, TW;

Po-Hsiung Leu, Lujhu Township, TW;

Tzu-Chun Lin, Zhudong Township, TW;

Ding-I Liu, Hsinchu, TW;

Jen-Chi Chang, Hsinchu, TW;

Ho-Ta Chuang, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01J 37/32 (2006.01); C23C 16/507 (2006.01);
U.S. Cl.
CPC ...
H01J 37/321 (2013.01); C23C 16/507 (2013.01); H01J 37/3211 (2013.01);
Abstract

A plasma reactor includes an enclosure having a top and a bottom and defining a processing chamber. Inlets are formed in the enclosure for injecting process gas into the chamber. An outlet is formed in the enclosure for withdrawing gas from the chamber. A platform is positioned to support a wafer in the chamber above the bottom. A plurality of coils is positioned above the top of the chamber. Each coil is coupled to a radio frequency generator.


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