The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Oct. 02, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Ming-Hsi Yeh, Hsinchu, TW;
Yih-Ann Lin, Hsinchu County, TW;
Bi-Ming Yen, Hsin-chu, TW;
Chao-Cheng Chen, Hsin-chu, TW;
Syun-Ming Jang, Hsin-chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 21/225 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2256 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/324 (2013.01); H01L 29/66795 (2013.01); H01L 21/0212 (2013.01); H01L 21/02118 (2013.01); H01L 21/02274 (2013.01); H01L 21/31138 (2013.01);
Abstract
A method includes providing a semiconductor substrate; forming a doping oxide layer on the semiconductor substrate; forming a patterning layer on the doping oxide layer, the patterning layer leaving exposed regions of the doping oxide layer; performing a sputtering process to the substrate; and after the sputtering process, performing a wet etching process to the semiconductor substrate to remove the doping oxide layer from the exposed regions.