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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9601318 B1

PDFFull Text
Date of Patent:
Mar. 21, 2017

Filed:

May. 12, 2015

Plasma processing method and plasma processing apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shigehiro Miura, Iwate, JP;

Hitoshi Kato, Iwate, JP;

Jun Sato, Iwate, JP;

Toshiyuki Nakatsubo, Iwate, JP;

Hiroyuki Kikuchi, Iwate, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Anita Alanko

Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/507 (2006.01); H01L 21/687 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); C23C 16/507 (2013.01); H01J 37/3244 (2013.01); H01J 37/32715 (2013.01); H01J 37/32779 (2013.01); H01J 37/32834 (2013.01); H01L 21/0228 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01); H01L 21/68764 (2013.01); H01L 21/3065 (2013.01);
Abstract

A plasma processing method is provided. In the method, a distribution of an amount of processing within a surface of a substrate by a plasma process performed on a film deposited on the substrate is obtained. Next, a flow speed of the plasma processing gas is adjusted by increasing the flow speed of the plasma processing gas supplied to a first area where the amount of processing is expected to be increased or by decreasing the flow speed of the plasma processing gas supplied to a second area where the amount of processing is expected to be decreased. Then, the plasma process is performed on the film deposited on the substrate by supplying the plasma processing gas having the adjusted flow speed into the predetermined plasma process area.

Find Patent Forward Citations

Miura, Shigehiro. (2017). Plasma processing method and plasma processing apparatus (U.S. Patent No. 9601318). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9601318

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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