The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Oct. 14, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Li-Wei Feng, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Hon-Huei Liu, Kaohsiung, TW;
Chao-Hung Lin, Changhua County, TW;
Nan-Yuan Huang, Tainan, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a method for forming a semiconductor structure, comprising: firstly, a substrate is provided, having a first fin structure and a second fin structure disposed thereon, next, a first isolation region is formed between the first fin structure and the second fin structure, a second isolation region is formed opposite the first fin structure from the first isolation region, and at least an epitaxial layer is formed on the side of the first fin structure and the second fin structure, wherein the epitaxial layer has a bottom surface, the bottom surface extending from the first fin structure to the second fin structure, and the bottom surface is lower than a bottom surface of the first isolation region and a top surface of the second isolation region, in addition, the epitaxial layer has a stepped-shaped sidewall profile.