The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Mar. 16, 2015
Applicant:

Asm Technology Singapore Pte Ltd, Singapore, SG;

Inventors:

Qinglong Zhang, Tsuen Wan, HK;

John Hon Shing Lau, Palo Alto, CA (US);

Ming Li, Kwai Chung, HK;

Michael Zahn, Singapore, SG;

Yiu Ming Cheung, Kowloon, HK;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/563 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 24/75 (2013.01); H01L 24/83 (2013.01); H01L 25/50 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 25/0655 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/14 (2013.01); H01L 2924/157 (2013.01); H01L 2924/1579 (2013.01); H01L 2924/15786 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A method of feeding underfill material to fill a space between a semiconductor die and a substrate onto which the semiconductor die has been bonded, the method comprises positioning a stencil over the semiconductor die. The stencil has an elongated slot extending adjacent to an edge of the semiconductor die. Underfill material is printed through the slot such that the underfill material falls through the slot onto the substrate next to the edge of the semiconductor die. Thereafter, the underfill material is heated such that the underfill material flows across the space between the semiconductor die and the substrate from the edge of the semiconductor die to an opposite edge thereof through capillary action.


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