The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Dec. 09, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Jun Yamawaku, Yamanashi, JP;

Chishio Koshimizu, Yamanashi, JP;

Yohei Yamazawa, Yamanashi, JP;

Mitsuhiro Tachibana, Iwate, JP;

Hitoshi Kato, Iwate, JP;

Takeshi Kobayashi, Iwate, JP;

Shigehiro Miura, Iwate, JP;

Takafumi Kimura, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); C23C 16/00 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
H01J 37/321 (2013.01); C23C 16/4584 (2013.01); C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); H01J 37/3211 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32651 (2013.01); H01J 37/32715 (2013.01); H01J 37/32733 (2013.01); H01J 37/32752 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02214 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract

A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.


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