The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jan. 24, 2013
Tokyo Electron Limited, Tokyo, JP;
Tadahiro Ishizaka, Yamanashi, JP;
Atsushi Gomi, Yamanashi, JP;
Kenji Suzuki, Yamanashi, JP;
Tatsuo Hatano, Yamanashi, JP;
Yasushi Mizusawa, Yamanashi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
When a recess is formed in a SiCOH film, C is removed from the film to form a damage layer. If the damage layer is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas or a gas containing trimethyl aluminum to the SiCOH film, B, Si or Al is adsorbed on the SiCOH film. These atoms bond with Ru and a Ru film is easily formed on the SiCOH film. The Ru film is formed using, for example, Ru(CO)gas and CO gas. Copper is filled in the recess and an upper side wiring structure is formed by carrying out CMP processing.