The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Aug. 05, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ching-Feng Fu, Taichung, TW;
De-Fang Chen, Hsin-Chu, TW;
Yu-Chan Yen, Taipei, TW;
Chia-Ying Lee, New Taipei, TW;
Chun-Hung Lee, Hsin-Chu, TW;
Huan-Just Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method comprises applying a first patterning process to a first photoresist layer to form a first opening, a second opening, a third opening and a fourth opening in the sacrificial layer, applying a second patterning process to a second photoresist layer to form a fifth opening, a sixth opening, a seventh opening and an eighth opening in the sacrificial layer, wherein distances between two adjacent openings formed from the first and second patterning processes are substantially equal to each other, applying a third patterning process to a third photoresist layer to form a ninth opening, a tenth opening, an eleventh opening and a twelfth opening in the sacrificial layer, wherein distances between two adjacent openings formed from the second and third patterning processes are substantially equal to each other and forming a plurality of nanowires based on the openings.