The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9559182 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 31, 2017

Filed:

Dec. 14, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Clement Hsingjen Wann, Carmel, NY (US);

Sey-Ping Sun, Hsin-Chu, TW;

Ling-Yen Yeh, Hsin-Chu, TW;

Chi-Yuan Shih, Hsin-Chu, TW;

Li-Chi Yu, Jhubei, TW;

Chun Hsiung Tsai, Xinpu Township, TW;

Chin-Hsiang Lin, Hsin-Chu, TW;

Neng-Kuo Chen, Hsin-Chu, TW;

Meng-Chun Chang, Taipei, TW;

Ta-Chun Ma, New Taipei, TW;

Gin-Chen Huang, New Taipei, TW;

Yen-Chun Huang, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 27/088 (2006.01); H01L 29/161 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 27/0886 (2013.01); H01L 29/161 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.


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