The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Mar. 02, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Li-Wei Feng, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Shih-Fang Hong, Tainan, TW;
Chao-Hung Lin, Changhua County, TW;
Jyh-Shyang Jenq, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/20 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02603 (2013.01);
Abstract
A nanowire transistor device includes a substrate, a plurality of nanowires formed on the substrate, and a gate surrounding at least a portion of each nanowire. The nanowires respectively include a first semiconductor core and a second semiconductor core surrounding the first semiconductor core. A lattice constant of the second semiconductor core is different from a lattice constant of the first semiconductor core.