The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
May. 20, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chia-Hao Hsu, Hsinchu, TW;
Chia-Chen Chen, Hsinchu, TW;
Jui-Ching Wu, Hsinchu, TW;
Shang-Chieh Chien, New Taipei, TW;
Chia-Jen Chen, Jhudong Township, TW;
Chia-Ching Huang, Su-ao Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-chu, TW;
Abstract
A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.