The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Nov. 16, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chin-I Liao, Tainan, TW;
Mon-Nan How, Hsinchu, TW;
Shih-Chieh Chang, Taipei, TW;
Ying-Min Chou, Tainan, TW;
Ting-Chang Chang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of fabricating a FinFET includes at last the following steps. A semiconductor substrate is patterned to form a plurality of trenches in the semiconductor substrate and at least one semiconductor fin between the trenches. Insulators are formed in the trenches. A gate stack is formed over portions of the semiconductor fin and over portions of the insulators. A strained material doped with a conductive dopant is formed over portions of the semiconductor fin revealed by the gate stack, and the strained material is formed by selectively growing a bulk layer with a gradient doping concentration.