Mon-Nan How

Title: Mon-Nan How: Innovator in Semiconductor Technology

Introduction

Mon-Nan How is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on Fin field effect transistors (FinFETs). His expertise and dedication to advancing technology have earned him recognition in the industry.

Latest Patents

Mon-Nan How holds a patent for a Fin field effect transistor and method for fabricating the same. This patent describes a method of fabricating a FinFET that includes several key steps. A semiconductor substrate is patterned to form a plurality of trenches and at least one semiconductor fin between the trenches. Insulators are formed in the trenches, and a gate stack is created over portions of the semiconductor fin and insulators. Additionally, a strained material doped with a conductive dopant is formed over portions of the semiconductor fin revealed by the gate stack. This strained material is selectively grown with a gradient doping concentration.

Career Highlights

Mon-Nan How is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to contribute to cutting-edge technologies and innovations in semiconductor fabrication.

Collaborations

Mon-Nan How has collaborated with notable colleagues, including Chin-I Liao and Shih-Chieh Chang. These collaborations have further enhanced his research and development efforts in the semiconductor field.

Conclusion

Mon-Nan How is a distinguished inventor whose work in semiconductor technology has led to significant advancements. His patent on FinFET fabrication methods showcases his innovative spirit and commitment to excellence in the industry.