The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Aug. 21, 2015
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventors:

Xin Lin, Phoenix, AZ (US);

Daniel J. Blomberg, Chandler, AZ (US);

Hongning Yang, Chandler, AZ (US);

Jiang-Kai Zuo, Chandler, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 31/107 (2006.01); H01L 23/58 (2006.01); H01L 27/082 (2006.01); H01L 27/102 (2006.01); H01L 29/70 (2006.01); H01L 31/11 (2006.01); H01L 29/866 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/266 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/866 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 29/0615 (2013.01); H01L 29/0649 (2013.01); H01L 29/66106 (2013.01);
Abstract

A diode includes a semiconductor substrate having a surface; a first contact region disposed at the surface of the semiconductor substrate and having a first conductivity type; and a second contact region disposed at the surface, laterally spaced from the first contact region, and having a second conductivity type. The diode also includes a buried region disposed in the semiconductor substrate vertically adjacent to the first contact region, having the second conductivity type, and electrically connected with the second contact region; and an isolation region disposed at the surface between the first and second contact regions. The diode also includes a separation region disposed at the surface between the first contact region and the isolation region, the separation region formed from a portion of a first well region disposed in the semiconductor substrate that extends to the surface.


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