The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Aug. 27, 2013
Applicant:

Air Products and Chemicals Inc., Allentown, PA (US);

Inventors:

Yi Chia Lee, Dansheui, TW;

Madhukar Bhaskara Rao, Fogelsville, PA (US);

Gautam Banerjee, Latham, NY (US);

Wen Dar Liu, Chupei, TW;

Aiping Wu, Macungie, PA (US);

Seiji Inaoka, Midland, MI (US);

Assignee:

AIR PRODUCTS AND CHEMICALS, INC., Allentown, PA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/50 (2006.01); H01L 21/02 (2006.01); C11D 7/10 (2006.01); C11D 7/26 (2006.01); C11D 7/32 (2006.01); G03F 7/42 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02052 (2013.01); C11D 7/10 (2013.01); C11D 7/265 (2013.01); C11D 7/3209 (2013.01); C11D 7/3218 (2013.01); C11D 7/3281 (2013.01); C11D 7/5013 (2013.01); C11D 7/5022 (2013.01); G03F 7/425 (2013.01); G03F 7/426 (2013.01);
Abstract

A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.


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