The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Mar. 08, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ming-Feng Shieh, Tainan County, TW;

Ya Hui Chang, Hsinchu, TW;

Ru-Gun Liu, Hsinchu County, TW;

Tsong-Hua Ou, Taipei, TW;

Ken-Hsien Hsieh, Taipei, TW;

Burn Jeng Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/42 (2012.01); G03F 9/00 (2006.01); H01L 23/544 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G03F 1/42 (2013.01); G03F 9/7076 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is an alignment mark having a plurality of sub-resolution elements. The sub-resolution elements each have a dimension that is less than a minimum resolution that can be detected by an alignment signal used in an alignment process. Also provided is a semiconductor wafer having first, second, and third patterns formed thereon. The first and second patterns extend in a first direction, and the third pattern extend in a second direction perpendicular to the first direction. The second pattern is separated from the first pattern by a first distance measured in the second direction. The third pattern is separated from the first pattern by a second distance measured in the first direction. The third pattern is separated from the second pattern by a third distance measured in the first direction. The first distance is approximately equal to the third distance. The second distance is less than twice the first distance.


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