The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Jan. 06, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

I-Wen Wu, Hsinchu, TW;

Mei-Yun Wang, Chu-Pei, TW;

Hsien-Cheng Wang, Hsinchu, TW;

Shih-Wen Liu, Taoyuan, TW;

Yun Lee, XiZhi, TW;

Chao-Hsun Wang, Chung-Li, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01);
Abstract

A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.


Find Patent Forward Citations

Loading…