The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Jul. 06, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Li-Wei Feng, Kaohsiung, TW;

Shih-Hung Tsai, Tainan, TW;

Hon-Huei Liu, Kaohsiung, TW;

Chao-Hung Lin, Changhua County, TW;

Nan-Yuan Huang, Tainan, TW;

Jyh-Shyang Jenq, Pingtung County, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/306 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 29/0649 (2013.01); H01L 29/785 (2013.01); H01L 29/7842 (2013.01);
Abstract

The present invention provides a semiconductor structure, including a substrate having a first fin structure and a second fin structure disposed thereon, a first isolation region located between the first fin structure and the second fin structure, a second isolation region located opposite the first fin structure from the first isolation region, and at least an epitaxial layer disposed on the side of the first fin structure and the second fin structure. The epitaxial layer has a bottom surface, the bottom surface extending from the first fin structure to the second fin structure, and the bottom surface is lower than a bottom surface of the first isolation region and a top surface of the second isolation region.


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