The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Feb. 18, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Jon-Hsu Ho, New Taipei, TW;
Chih-Ching Wang, Jinhu Township, TW;
Ching-Fang Huang, Taipei, TW;
Wen-Hsing Hsieh, Taichung, TW;
Tsung-Hsing Yu, Taipei, TW;
Yi-Ming Sheu, Hsinchu, TW;
Chih Chieh Yeh, Taipei, TW;
Ken-Ichi Goto, Hsin-Chu, TW;
Zhiqiang Wu, Chubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A multi-gate semiconductor device is formed including a semiconductor substrate. The multi-gate semiconductor device also includes a first transistor including a first fin portion extending above the semiconductor substrate. The first transistor has a first channel region formed therein. The first channel region includes a first channel region portion doped at a first concentration of a first dopant type and a second channel region portion doped at a second concentration of the first dopant type. The second concentration is higher than the first concentration. The first transistor further includes a first gate electrode layer formed over the first channel region. The first gate electrode layer may be of a second dopant type. The first dopant type may be N-type and the second dopant type may be P-type. The second channel region portion may be formed over the first channel region portion.