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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9502252 B1

PDFFull Text
Date of Patent:
Nov. 22, 2016

Filed:

Mar. 04, 2015

Semiconductor device and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Li-Wei Feng, Kaohsiung, TW;

Shih-Hung Tsai, Tainan, TW;

Chao-Hung Lin, Changhua County, TW;

Hon-Huei Liu, Kaohsiung, TW;

Shih-Fang Hong, Tainan, TW;

Jyh-Shyang Jenq, Pingtung County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 21/8238 (2006.01); H01L 21/324 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2256 (2013.01); H01L 21/324 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least one fin-shaped structure thereon, in which the fin-shaped structure comprises a top portion and a bottom portion; and forming a doped layer and a first liner around the bottom portion of the fin-shaped structure.

Find Patent Forward Citations

Feng, Li-Wei. (2016). Semiconductor device and method for fabricating the same (U.S. Patent No. 9502252). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9502252

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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