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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9494718 B1

PDFFull Text
Date of Patent:
Nov. 15, 2016

Filed:

Jun. 15, 2012

Mirror for the euv wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective

Applicants:

Stephan Muellender, Aalen, DE;

Joern Weber, Aalen, DE;

Wilfried Clauss, Ulm, DE;

Hans-jochen Paul, Aalen, DE;

Gerhard Braun, Ederheim, DE;

Sascha Migura, Aalen-Unterrombach, DE;

Aurelian Dodoc, Heidenheim, DE;

Christoph Zaczek, Heubach, DE;

Gisela Von Blanckenhagen, Aalen, DE;

Roland Loercher, Aalen-Hofherrnweiler, DE;

Inventors:

Stephan Muellender, Aalen, DE;

Joern Weber, Aalen, DE;

Wilfried Clauss, Ulm, DE;

Hans-Jochen Paul, Aalen, DE;

Gerhard Braun, Ederheim, DE;

Sascha Migura, Aalen-Unterrombach, DE;

Aurelian Dodoc, Heidenheim, DE;

Christoph Zaczek, Heubach, DE;

Gisela Von Blanckenhagen, Aalen, DE;

Roland Loercher, Aalen-Hofherrnweiler, DE;

Assignee:

Carl Zeiss SMT GmbH, Oberkochen, DE;

Attorney:

Edell, Shapiro & Finnan, LLC

Primary Examiner:

Bumsuk Won

Assistant Examiner:

Grant Gagnon

Int. Cl.
CPC ...
G02B 5/08 (2006.01); G02B 1/10 (2015.01); G03F 7/20 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
G02B 5/0891 (2013.01); B82Y 30/00 (2013.01); G02B 1/105 (2013.01); G02B 5/0816 (2013.01); G03F 7/70233 (2013.01); G03F 7/70316 (2013.01); G03F 7/70958 (2013.01);
Abstract

A mirror (') for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P′″) consisting of a periodic sequence of at least two periods (P) of individual layers, wherein the periods (P) include two individual layers composed of different materials for a high refractive index layer (H′″) and a low refractive index layer (L′″), wherein the layer arrangement includes at least one surface protecting layer (SPL, L) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.

Find Patent Forward Citations

Quick Actions:

Muellender, Stephan. (2016). Mirror for the euv wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective (U.S. Patent No. 9494718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9494718

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