The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Oct. 07, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Hsien Chang, Shetou Township, TW;
Chun-Ren Cheng, Hsinchu, TW;
Yi-Shao Liu, Zhubei, TW;
Allen Timothy Chang, Hsinchu, TW;
Ching-Ray Chen, Taipei, TW;
Yeh-Tseng Li, Zhubei, TW;
Wen-Hsiang Lin, Jhudong Township, TW;
Abstract
A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the HOat a flow rate greater than about 10 standard cubic centimeters per minute (sccm).