The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Jun. 16, 2011
Chien-ming Lai, Tainan, TW;
Yi-wen Chen, Tainan, TW;
Zhi-cheng Lee, Tainan, TW;
Tong-jyun Huang, Tainan, TW;
Che-hua Hsu, Hsinchu County, TW;
Kun-hsien Lin, Tainan, TW;
Tzung-ying Lee, Pingtung County, TW;
Chi-mao Hsu, Tainan, TW;
Hsin-fu Huang, Tainan, TW;
Chin-fu Lin, Tainan, TW;
Chien-Ming Lai, Tainan, TW;
Yi-Wen Chen, Tainan, TW;
Zhi-Cheng Lee, Tainan, TW;
Tong-Jyun Huang, Tainan, TW;
Che-Hua Hsu, Hsinchu County, TW;
Kun-Hsien Lin, Tainan, TW;
Tzung-Ying Lee, Pingtung County, TW;
Chi-Mao Hsu, Tainan, TW;
Hsin-Fu Huang, Tainan, TW;
Chin-Fu Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., HSINCHU, TW;
Abstract
A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening.