The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Oct. 30, 2015
Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);
Dow Global Technologies Llc, Midland, MI (US);
Bainian Qian, Newark, DE (US);
Yi Guo, Newark, DE (US);
Marty W. DeGroot, Middletown, DE (US);
George C. Jacob, Newark, DE (US);
Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark, DE (US);
Dow Global Techologies LLC, Midland, MI (US);
Abstract
A chemical mechanical polishing method is provided comprising: providing a substrate, wherein the substrate comprises a silicon oxide and a silicon nitride; providing a polishing slurry; providing polishing pad, comprising: a polishing layer having a composition that is a reaction product of ingredients, comprising: a polyfunctional isocyanate and an amine initiated polyol curative; wherein the stoichiometric ratio of the amine initiated polyol curative to the polyfunctional isocyanate is selected to tune the removal rate selectivity of the polishing layer; creating dynamic contact between the polishing surface and the substrate; dispensing the polishing slurry on the polishing pad at or near the interface between the polishing surface and the substrate; and, removing at least some of the silicon oxide and the silicon nitride from the substrate.