The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Sep. 26, 2014
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Akiko Kobayashi, Tokyo, JP;

Akinori Nakano, Tokyo, JP;

Dai Ishikawa, Ome, JP;

Kiyohiro Matsushita, Fuchu, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02359 (2013.01); H01L 21/02362 (2013.01); H01L 21/3105 (2013.01);
Abstract

A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.

Published as:
US2016093485A1; TW201612352A; US9478414B2; TWI674328B;

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