The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Sep. 12, 2014
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Sesha Varadarajan, Oswego, OR (US);

Shankar Swaminathan, Beaverton, OR (US);

Saangrut Sangplung, Sherwood, OR (US);

Frank Pasquale, Tualatin, OR (US);

Ted Minshall, Sherwood, OR (US);

Adrien LaVoie, Newberg, OR (US);

Mohamed Sabri, Beaverton, OR (US);

Cody Barnett, Portland, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/505 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/4585 (2013.01); C23C 16/45544 (2013.01); C23C 16/45597 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02186 (2013.01);
Abstract

A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.


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