The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Sep. 24, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Li-Wei Feng, Kaohsiung, TW;
Chien-Ting Lin, Hsinchu, TW;
Shih-Hung Tsai, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Hon-Huei Liu, Kaohsiung, TW;
Shih-Fang Hong, Tainan, TW;
Chao-Hung Lin, Changhua County, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region defined thereon; forming a material layer on the substrate; forming a plurality of first mandrels on the material layer of the first region and the second region; forming first spacers adjacent to the first mandrels; forming a hard mask on the first region; trimming the first spacers on the second region; removing the first mandrels; using the first spacers to remove part of the material layer for forming a plurality of second mandrels; forming second spacers adjacent to the second mandrels; removing the second mandrels; and using the second spacers to remove part of the substrate for forming a plurality of fin-shaped structures.