The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Nov. 10, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Hao Hou, Hsinchu, TW;
Peng-Soon Lim, Johor, MY;
Da-Yuan Lee, Jhubei, TW;
Xiong-Fei Yu, Hsinchu, TW;
Chun-Yuan Chou, Taipei, TW;
Fan-Yi Hsu, Toufen Town, TW;
Jian-Hao Chen, Hsinchu, TW;
Kuang-Yuan Hsu, Fongyuan, TW;
Abstract
An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially filling the opening with a first metal material over the high-dielectric-constant material. The method further includes filling the opening with a capping layer over the first metal material. The method additionally includes partially removing the first metal material and the capping layer in the opening using a wet etching process in a solution including one or more of HO, NHOH, HCl, HSOor diluted HF. The method also includes fully removing the remaining capping layer in the opening using a wet etching process in a solution includes one or more of NHOH or diluted HF. The method further includes depositing a second metal material in the opening over the remaining first metal material.