The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
May. 29, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Ching-Feng Fu, Taichung, TW;
De-Fang Chen, Hsin-Chu, TW;
Yu-Chan Yen, Taipei, TW;
Chia-Ying Lee, New Taipei, TW;
Chun-Hung Lee, Hsin-Chu, TW;
Huan-Just Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/308 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/3086 (2013.01); H01L 21/823487 (2013.01); H01L 29/0676 (2013.01); H01L 29/1037 (2013.01); H01L 29/7827 (2013.01); H01L 27/088 (2013.01);
Abstract
A device comprises a first group of nanowires having a first pattern, a second group of nanowires having a second pattern, a third group of nanowires having a third pattern and a fourth group of nanowires having a fourth pattern, wherein the first pattern, the second pattern, the third pattern and the fourth pattern form a repeating pattern.