The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Jun. 04, 2012
Applicants:

Minjung Kim, Kyounggi do, KR;

Kyunghoon Lee, Kyunggi-Do, KR;

Joungin Yang, Seoul, KR;

Wonil Kwon, Seoul, KR;

Daesik Choi, Seoul, KR;

Inventors:

MinJung Kim, Kyounggi do, KR;

KyungHoon Lee, Kyunggi-Do, KR;

JoungIn Yang, Seoul, KR;

WonIl Kwon, Seoul, KR;

DaeSik Choi, Seoul, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 21/78 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device has a semiconductor wafer with an interconnect structure formed over a first surface of the wafer. A trench is formed in a non-active area of the semiconductor wafer from the first surface partially through the semiconductor wafer. A protective coating is formed over the first surface and into the trench. A lamination tape is applied over the protective coating. A portion of a second surface of the semiconductor wafer is removed by backgrinding or wafer thinning to expose the protecting coating in the trench. A die attach film is applied over the second surface of the semiconductor wafer. A cut or modified region is formed in the die attach film under the trench using a laser. The semiconductor wafer is expanded to separate the cut or modified region of the die attach film and singulate the semiconductor wafer.


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