The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Oct. 17, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Po-Chih Chen, Hsinchu, TW;
Jiun-Lei Jerry Yu, Zhudong Township, TW;
Yu-Syuan Lin, Lukang Township, TW;
Yao-Chung Chang, Zhubei, TW;
King-Yuen Wong, Tuen Mun, HK;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A group III-V transistor device employing a novel layout for isolating and/or defining the active region is provided. A group III-V heterojunction is arranged over or within a substrate, and an inner drain electrode is arranged over the group III-V heterojunction. A gate has a ring shape and is arranged over the group III-V heterojunction around the inner drain electrode. An outer source electrode has a ring-shaped region arranged over the group III-V heterojunction around the gate. A method for manufacturing the group III-V transistor device is also provided.