The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Aug. 31, 2009
Applicants:

Hangil Shin, Gyeonggi-do, KR;

Heejo Chi, Kyoungki-do, KR;

Namju Cho, Gyeonggi-do, KR;

Inventors:

HanGil Shin, Gyeonggi-do, KR;

HeeJo Chi, Kyoungki-do, KR;

NamJu Cho, Gyeonggi-do, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01); H01L 25/03 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/27 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/03 (2013.01); H01L 25/105 (2013.01); H01L 23/49816 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2221/68331 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/20 (2013.01); H01L 2224/274 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/30105 (2013.01);
Abstract

A semiconductor wafer contains a plurality of semiconductor die. A plurality of bumps is formed on the semiconductor wafer. The bumps are electrically connected to contact pads on an active surface of the die. The bumps can also be pillars or stud bumps. A first encapsulant is deposited over the bumps. The semiconductor wafer is singulated to separate the die by cutting channels partially through the wafer and back grinding the wafer down to the channels. A second encapsulant is deposited over the die. A first interconnect structure is formed over a first surface of the second encapsulant. The first interconnect structure is electrically connected to the bumps. A second interconnect structure is formed over a second surface of the second encapsulant. Secondary semiconductor components can be stacked over the second interconnect structure. A third encapsulant is deposited over the stacked secondary components and second interconnect structure.


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