The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
May. 08, 2012
Kyunghoon Lee, Kyunggi-Do, KR;
Joungin Yang, Seoul, KR;
Sang MI Park, Kyounggi-do, KR;
Daesik Choi, Seoul, KR;
Yisu Park, Kyoungki-do, KR;
KyungHoon Lee, Kyunggi-Do, KR;
JoungIn Yang, Seoul, KR;
Sang Mi Park, Kyounggi-do, KR;
DaeSik Choi, Seoul, KR;
YiSu Park, Kyoungki-do, KR;
STATS ChipPAC Pte. Ltd., Singapore, SG;
Abstract
A semiconductor device has a substrate and insulating layer formed over a surface of the substrate. A first conductive layer is formed over the surface of the substrate. A second conductive layer is formed over an opposing surface of the substrate. A conductive via is formed through the substrate. An opening is formed in the insulating layer while leaving the first conductive layer intact. The opening narrows with a non-linear side or linear side. The opening can have a rectangular shape. A semiconductor die is mounted over the surface of the substrate. An underfill material is deposited between the semiconductor die and substrate. The opening in the insulating layer reduces a flow rate of the underfill material proximate to the opening. The flow rate of the underfill material proximate to the opening is substantially equal to a flow rate of the underfill material away from the opening.