The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Feb. 10, 2015
Applicants:

Globalfoundries Inc., Grand Cayman, KY;

Stmicroelectronics, Inc., Coppell, TX (US);

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Grenoble, FR;

Inventors:

Kangguo Cheng, Schnectady, NY (US);

Bruce B. Doris, Slingerlands, NY (US);

Laurent Grenouillet, Rives, FR;

Ali Khakifirooz, Los Altos, CA (US);

Yannick Le Tiec, Crolles, FR;

Qing Liu, Guilderland, NY (US);

Maud Vinet, Rives sur Fure, FR;

Assignee:

GlobalFoundries, Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/225 (2006.01); H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2253 (2013.01); H01L 21/761 (2013.01); H01L 21/7624 (2013.01); H01L 21/76243 (2013.01); H01L 21/76283 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/0684 (2013.01); H01L 29/66477 (2013.01); H01L 29/78648 (2013.01); H01L 29/66772 (2013.01); H01L 29/78612 (2013.01);
Abstract

Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased.


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