The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Nov. 03, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chen-Hao Chiang, Jhongli, TW;
Po-Chun Liu, Hsinchu, TW;
Chi-Ming Chen, Zhubei, TW;
Min-Chang Ching, Zhubei, TW;
Chung-Yi Yu, Hsinchu, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Ru-Liang Lee, Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a first layer over the substrate, a second layer over the first layer, and a third layer over the second layer. The third layer has a first portion and a second portion. The first portion of the third layer is separated from the second portion of the third layer. The semiconductor device also includes a first blended region beneath the first portion of the third layer. The first blended region includes aluminum atoms drawn from the first layer into at least the second layer. The semiconductor device further includes a second blended region beneath the second portion of the third layer. The second blended region includes aluminum atoms drawn from the first layer into at least the second layer. The semiconductor device also includes a source contact and a drain contact.