The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Jul. 15, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Tomohiko Kitajima, San Jose, CA (US);

Jeffrey Drue David, San Jose, CA (US);

Jun Qian, Sunnyvale, CA (US);

Taketo Sekine, Cupertino, CA (US);

Garlen C. Leung, San Jose, CA (US);

Sidney P. Huey, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/321 (2006.01); H01L 21/3105 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01L 21/31053 (2013.01); H01L 21/31055 (2013.01); H01L 21/31116 (2013.01); H01L 21/3212 (2013.01); H01L 21/67075 (2013.01); H01L 21/67092 (2013.01); H01L 21/67253 (2013.01); H01L 22/14 (2013.01); H01L 22/20 (2013.01); H01L 22/34 (2013.01);
Abstract

A method of controlling polishing includes storing a base measurement, the base measurement being an eddy current measurement of a substrate after deposition of at least one layer overlying a semiconductor wafer and before deposition of a conductive layer over the at least one layer, after deposition of the conductive layer over the at least one layer and during polishing of the conductive layer on substrate, receiving a sequence of raw measurements of the substrate from an in-situ eddy current monitoring system, normalizing each raw measurement in the sequence of raw measurement to generate a sequence of normalized measurements using the raw measurement and the base measurement, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least the sequence of normalized measurements.


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