The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Apr. 25, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Tsong-Hua Ou, Taipei, TW;
Ken-Hsien Hsieh, Taipei, TW;
Shih-Ming Chang, Hsinchu County, TW;
Wen-Chun Huang, Tainan, TW;
Chih-Ming Lai, Hsinchu, TW;
Ru-Gun Liu, Hsinchu County, TW;
Tsai-Sheng Gau, HsinChu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of patterning a target material layer over a semiconductor substrate. The method includes steps of: forming a plurality of first features over the target material layer using a first sub-layout, with each first feature having sidewalls; forming a plurality of spacer features, with each spacer feature conforming to the sidewalls of one of the first features and having a spacer width; and forming a plurality of second features over the target material layer using a second sub-layout. The method further includes steps of removing the plurality of spacer features from around each first feature and patterning the target material layer using the plurality of first features and the plurality of second features. Other methods and associated patterned semiconductor wafers are also provided herein.